Abstract
Fractured edges of diamond films grown by chemical vapor deposition (CVD) have been examined directly in a conventional transmission electron microscope (TEM) without thinning, An important advantage of the fracture specimen preparation technique is that the microstructures in the diamond grains at the growth face can be characterized directly by bright-field (BF) and dark-field (DF) TEM imaging and diffraction. Additionally, the topography of the same region can be directly determined from secondary electron (SE) images available in the same TEM.
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