Abstract
There is an increasing effort for the development of transmission electron microscopes operating at accelerating voltages of less that 100 kV, down to 20 kV. This work aims to clarify if the technology of conventional indirect scintillator-CCD cameras is suitable to record images formed with electrons of such low energy and how its performance compare to that of novel direct silicon imaging detectors. The performance of these imaging detectors is discussed in terms of modulation transfer function and detective quantum efficiency. It is demonstrated that whilst the performance of conventional scintillator-CCDs improves as the electron energy is dropped, it then peaks at 70 keV and then drops again. Optimum imaging performance at even lower energies is expected for the novel directly exposed detectors, which are capable of near 100% detective quantum efficiency at very low electron energies.
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