Abstract
Dielectric Breakdown Transistors, capacitors, and resistive random-access memory (RRAM) elements have an oxide film at their heart. In article number 2102313, Brian C. Regan and co-workers apply scanning transmission electron microscopy (STEM) electron beam-induced current (EBIC) imaging to RRAM elements cycling in situ. STEM EBIC imaging clearly visualizes otherwise-invisible dielectric breakdown processes occurring in the nominally insulating oxide film.
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