Imaging and local transport measurements of GaSb self-assembled quantum dots on GaAs

Abstract

Individual GaSb self-assembled quantum dots in a GaAs matrix are imaged and probed using ballisitic electron emission microscopy (BEEM). The nanometer scale lateral resolution of BEEM enables one to inject carriers directly into a single dot and therefore perform local transport measurements without electrically contacting the individual dot. Comparison of BEEM spectra on and off of a dot yields a local conduction band offset between GaSb dots and GaAs of 0.08±.02 eV.