Abstract
Ferroelectric stripe domain structure and domain walls were investigated by vector PFM on epitaxial BiFeO3 thin films. Measurements of topography of film versus distance between spikes, we identify the [Formula: see text] domain in the film, were supported by XRD and AFM characterization. [Formula: see text] domain can be switched under the electric field engendered by the biased PFM tip, and their controllable [Formula: see text] rotation can be maintained by electron injection by the PFM tip. These stripe domain walls are conductive, provide an opportunity to further study their new properties in high-density memory devices.
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