Abstract
Microscopic segregation of carbon in GaAs has been studied using autoradiography of a crystal doped with radioactive tracer 14C. The autoradiographs were compared to images of the wafers obtained by photoetching and by high resolution scanning photoluminescence microscopy. It was found that the carbon distribution is homogeneous within the limit of the resolution of the radiographs of about 15 μm and that there is no correlation between the carbon distribution and the luminescence contrast.
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