Abstract
Much of the success of the scanning electron microscope (SEM) can be attributed to the fact that the images that it produces appear similar to those seen by our eyes. Consequently the interpretation of SEM micrographs is perceived as a straightforward process. Although this casual approach works well enough for many qualitative purposes, when the SEM is to be used to make precise dimensional measurements of micron-sized features, such as resist strips or conductor pads, then more care must be paid to the details of image formation.Two types of electron signal, backscattered (BS) and secondary (SE), are usually available in an SEM. In many respects quantitative image interpretation is more straightforward for backscattered than for secondary electrons because Monte Carlo trajectory tracing techniques can be employed to compute the expected variation of signal with beam position.
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