Abstract
Diode array camera tubes have been fabricated with dislocation-free crystals (CZ and FZ). The relation between defects in the target crystals and bright spots in their video images were studied by the Sirtl etching technique. It was found that dislocation loops with stacking faults and a new type of defects are formed in low (below 1220°C) and high (above 1228°C) temperature oxidation processes, respectively. Both defects were found to be responsible for the spot-like images. These image damages can be eliminated by annealing the wafers at 1200°C before the oxidation process, which does not cause any degradation in the characteristics of the camera tubes. The mechanism of the defect elimination is discussed.
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