Abstract
In order to observe the effect of atomic resonant scattering on X-ray topography, topographs of a GaAs crystal with the 200 reflection have been taken using synchrotron X-rays with energy near the K-absorption edges of Ga and As. The X-ray energy has been tuned to four typical resonant scattering conditions. It is shown that the contrast of lattice defects observed in topographs changes with the resonant scattering conditions. Such topography taken under resonant scattering is useful for studying lattice defects in crystals.
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