Abstract
CuInS 2 thin films were prepared by ion layer gas reaction (ILGAR) method using C 2H 5OH as solvent, CuCl and InCl 3 as reagents and H 2S gas as sulfuration source. The effects of cationic precursor concentration and numbers of dipping cycles on characteristics of CuInS 2 film were investigated. The results shows that the chalcopyrite CuInS 2 with near stoichiometry can be deposited as [In 3+] ≤ 0.05 M and [Cu +] ≤ 0.078M ([Cu +]/[In 3+] = 1.55), while Cu x S segregation phase appears with further increasing cationic concentration. Its deposition rate is close to constant as cationic concentration is fixed, and nonlinearly increases with increasing the cationic concentration. CuInS 2 thin film derived from lower cationic concentration is uniform, compact and good in adhesion to the substrates. The absorption coefficient of CuInS 2 thin films is larger than 10 4 cm −1, and the optical band gap E g is 1.30∼1.40 eV and has a slight fall with increase of the cationic concentration. The dark resistivity decreases from ∼50 to ∼10 Ω cm and the carrier concentration ranges over 10 16 cm −3.
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