Abstract
InGaN multi-quantum-well-structure (MQW) laser diodes (LDs) with Al/sub 0.14/Ga/sub 0.86/N/GaN modulation doped strained-layer superlattice (MD-SLS) cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime of more than 1150 hours under room-temperature continuous-wave operation. The use of the MD-SLS was effective in reducing the operating voltage of the LDs. The ELOG substrate was used to reduce the number of threading dislocations in the InGaN MQW structure. After 2 /spl mu/m etching of the ELOG substrate, the etch pit density was about 2/spl times/10/sup 7//cm/sup 2/ in the region of the 4-/spl mu/m-wide stripe window, but almost zero in the region of the 8-/spl mu/m-wide SiO/sub 2/ stripe.
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