Abstract
Abstract Gallium Nitride (GaN) is an attractive material for high frequency and high power devices. Due to the availability of relatively high quality free-standing bulk GaN substrates, research and developments of vertical GaN devices on GaN substrates are getting hot in recent years, and various transistors and diodes based on vertical GaN with excellent characteristics have been reported. In this chapter, technological progress and characteristics of vertical GaN power devices fabricated on free-standing bulk GaN substrates are described, including technological developments of our recent research results of Schottky barrier diodes and trench metal–oxide–semiconductors field-effect transistors.
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