III-Nitride High Voltage Nitride Electronics

Abstract

The recent development of low dislocation density Aluminum Nitride (AlN) substrates allows the realization of a new class of majority carrier power devices. Majority carrier devices based on AlxGa1-xN grown on AlN substrates will be able to operate with breakdown voltages in excess of 20KV. A significant challenge to the development of these devices is the ionization efficiency of donor levels in high Al AlxGa1-xN. Donor ionization energies have been measured as high as .35eV for pure AlN. In order to realize the promise of these devices doped superlattice or modulation-doped blocking structures are proposed. These geometries allow for the realization of high breakdown Schottky barrier diodes and vertical MOS power transistors in high Al AlxGa1-xN.