Abstract
Using of complex equipment SemiTEq shown in example of a closed cycle of basic technological operations for production of high-power field microwave transistors based on gallium nitride in the Svetlana-Rost JSC. Basic technological operations are shown: MBE growth of heterostructures, metal deposition of contacts using electron-beam evaporation system, thermal annealing of ohmic contacts, meza-isolation plasma-chemical etching and dielectric plasma deposition. The main problems during the technological route as well as ways to solve are discussed. In particular, ways to reduce the dislocation density in the active region of the transistor heterostructures grown on the mismatched substrates are described in detail. Special attention given to the homogeneity and reproducibility both after some manufacturing operations and applied to the end product.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
