Abstract
Semiconductor heterostructures utilizing the III-N material aluminium nitride (AlN) have attracted significant interest for optoelectronic device applications in the ultraviolet (UV) spectral range. We will discussion the impact of alloy fluctuations on the electronic and optical properties of (Al,Ga)N and (Al,In)N materials by means of atomistic theoretical studies. Moreover, we present a theoretical analysis of the impact of random alloy fluctuations on the electronic and optical properties of c-plane (Al,Ga)N/AlN quantum wells. Finally, we will give an outlook for potential ways to tailor the electronic and optical properties of UV light emitters by utilizing for instance boron containing III-N alloys.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
