Abstract
The state of the art of the processing of III–V compounds accentuating and devices is reviewed. The problems are discussed which limit the reliability of bulk materials. It is shown that the application of strained layer epitaxy allows a quality enhancement by achieving low defect and trap densities as well as greater uniformity as in the case of untreated wafers. For modern devices thin layer epitaxy below 10 nm, atomic layer epitaxy, and selective growth are of high importance. Data are given for different growth procedures including laser stimulated growth, with emphasis on low pressure MOVPE. The processing steps are discussed for lateral and vertical configurations including ion implantation, optical and E‐beam lithography, and dry etching procedures. The limits are envisaged.
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