Abstract
AbstractIn this paper III‐V on silicon‐on‐insulator (SOI) heterogeneous integration is reviewed for the realization of near infrared light sources on a silicon waveguide platform, suitable for inter‐chip and intra‐chip optical interconnects. Two bonding technologies are used to realize the III‐V/SOI integration: one based on molecular wafer bonding and the other based on DVS‐BCB adhesive wafer bonding. The realization of micro‐disk lasers, Fabry‐Perot lasers, DFB lasers, DBR lasers and mode‐locked lasers on the III‐V/SOI material platform is discussed.
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