Abstract
We report an eight-channel silicon evanescent laser array operating at continuous wave and room temperature conditions using selective-area metal bonding technique. The laser array is realized by evanescently coupling the optical gain of InGaAsP multi-quantum wells to the silicon waveguides of varying widths and patterned with distributed Bragg reflector (DBR) gratings. The lasers have emission peak wavelengths in range of 1537 and 1543 nm with a wavelength spacing of about 1.0 nm. The thermal impedance ZT of these hybrid lasers are evidently lower than those DFB counterparts.
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