Abstract
Semiconductors composed of one group III and one group V element are widely used in light-emitting diodes, thermal imaging systems, and other commercial devices. These binary materials, which include gallium and indium antimonide, may soon find their way into even more electronic applications thanks to a study showing that the normally nonporous materials can be prepared as inherently tunable clathrates—crystals with cage-like cavities that trap molecules or ions (J. Am. Chem. Soc. 2020, DOI: 10.1021/jacs.9b12351). By using high-temperature methods to react stoichiometric quantities of group III and group V elements (or binary precursors) with either rubidium or cesium, Bryan Owens-Baird, Jian Wang, and Kirill Kovnir of Iowa State University and coworkers synthesized three unconventional III-V clathrates: Cs8In27Sb19, Cs8Ga27Sb19, and Rb8Ga27Sb19. Analyses show that the new compounds retain the high charge-carrier mobility and other critical semiconductor properties of the conventional versions. For example, the values of those parameters in Cs8In27Sb19 are
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