Abstract
Compact multi-frequency lasers are realized by combining III-V based optical amplifiers with silicon waveguide optical demultiplexers using a heterogeneous integration process based on adhesive wafer bonding. Both devices using arrayed waveguide grating routers as well as devices using ring resonators as the demultiplexer showed lasing with threshold currents between 30 and 40 mA and output powers in the order of a few mW. Laser operation up to 60°C is demonstrated. The small bending radius allowable for the silicon waveguides results in a short cavity length, ensuring stable lasing in a single longitudinal mode, even with relaxed values for the intra-cavity filter bandwidths.
Highlights
Multi-frequency lasers (MFL) are attractive devices for use in high-capacity WDM networks [1] or as digitally tunable lasers [2]
Compact multi-frequency lasers are realized by combining III-V based optical amplifiers with silicon waveguide optical demultiplexers using a heterogeneous integration process based on adhesive wafer bonding
Both devices using arrayed waveguide grating routers as well as devices using ring resonators as the demultiplexer showed lasing with threshold currents between 30 and 40 mA and output powers in the order of a few mW
Summary
Multi-frequency lasers (MFL) are attractive devices for use in high-capacity WDM networks [1] or as digitally tunable lasers [2]. The optical demultiplexer filters the amplified spontaneous emission (ASE) coming from the amplifier and if the gain provided is sufficient to overcome the intra-cavity losses and the mirror losses, the device will start lasing at the wavelengths determined by the demultiplexer Such devices fully integrated on an InP based platform were intensively studied by e.g. Joyner, Doerr et al at Bell Labs, using an arrayed waveguide grating (AWG) as the demultiplexer. We recently demonstrated a heterogeneous integration platform consisting of InP-based amplifiers adiabatically coupled with nano-photonic silicon waveguide devices fabricated in a 400nm/220nm SOI-layer (Silicon-On-Insulator) [4,5] This allows for the realization of very compact filter devices, such as ring resonators and AWG demultiplexers [6].
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