Abstract
We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.
Highlights
In this work we report about molecular-beam epitaxy (MBE) growth and physical properties of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates
The results of transmission electron microscopy (TEM) measurements confirmed the assumption about the formation of InAsP QDs and radial InAsP quantum wells (QWs) in the body of InP NWs
Results of GaAs QDs optical properties studies have shown that these objects are sources of single photons
Summary
In this work we report about molecular-beam epitaxy (MBE) growth and physical properties of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. 2015 (2021) 012124 doi:10.1088/1742-6596/2015/1/012124 (or QDs) with lower bandgap were formed, which were covered again by the material of the NWs. The GaAs QDs formation time was varied in the range of 5-15 seconds.
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