Abstract
III-V MOSFETs are currently being considered for logic applications with the aim to increase the drive current at reduced power consumption. The benefits of the III-V material include a high injection velocity and the possibility to operate close to the ballistic limit, whereas the cylindrical geometry provides electrostatic control. The devices may also find RF-applications that will require studies of further metrics like the on-resistance, the output conductance, and the voltage gain. For device applications it is essential to consider the complete transistor architecture to optimize the layout and to minimize parasitic elements.In this talk, we will discuss the possibilities and benefits of using III-V Nanowire MOSFETs in RF-applications. In particular we will demonstrate:Integration III-V nanowires on 4” Si substratesInterface characterization of the III-V/High-k surfaceDesign of transistor architectures at scaled gate lengthsRF-performance for 200 nm Lg devicesStrategies to integrate p-type devicesOperation of InAs MOSFET RF down-conversion mixers on Si substrates
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