Abstract
This paper aims to present a brief review on the specific features and advantages of the III–V micromachined devices for microsystems, making them an attractive alternative to the well developed Si-based microtechnology in the field of MEMS (Micro-Electro-Mechanical Systems). The GaAs-based MEMS processing techniques are more currently investigated for collective fabrication of low cost and high volume microsystem devices. Potential applications of InP-based microtechnology are presented for monolithic integration of optoelectronic functions with micro-electro-mechanical transducers enabling the realisation of MOEMS (Micro-Opto-Electro-Mechanical Systems).
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