III – V and Wide Bandgap

Abstract

III–V and wide bandgap semiconductors, such as diamond, silicon carbide (SiC), and gallium nitride (GaN), are ideal candidates for high efficiency, high power, and high temperature electronics, for both high frequency and DC power conversion applications. The superior electronic material properties of wide bandgaps enable device Figures-of-merit beyond what can be achieved by silicon. Indeed, several demonstrations of the capability of those semiconductors have shown performance figures near the theoretical physical limit. In certain application areas, commercially available wide bandgap transistors are already replacing silicon and GaAs. GaN in particular, is capable of covering both the high frequency and DC power application fields, using the unique High Electron Mobility Transistor (HEMT) device structure. However, the degree of technological maturity, reliability, and the limited complexity of integrated circuits possible with wide bandgaps are still far below what can be achieved by silicon. Therefore, wide bandgaps are mostly used as single power amplifier devices, hetero integrated with silicon surrounding electronics, which limits the overall circuit efficiency. With the current trend of increased demand of wireless communications, and power conversion units, research and development efforts started to overcome some of those limitations, and increased complexity of wide bandgap electronics started to emerge. Overcoming the major reliability issues and developing more sophisticated thermal management techniques, in addition to lowering the overall device cost, should enable wider market entry for wide bandgaps, and will contribute significantly to reducing the overall energy consumption of our societies.