Abstract
Antimony (Sb) based compound semiconductor materials have the highest electron and hole mobilities amongst all compound semiconductor materials. Transistors using Sbchannel deliver much higher performance at significantly lower power. As compared to InxGa1-xAs/InP system Sb's have higher band offsets for a heterostructure design and higher mobility for holes. Sb-based channel materials are the only candidates, which can offer a complementary technology outperforming silicon in a single channel material. A CMOS technology in a single channel material is more advantageous for integration vs. one which requires two different materials with different lattice constants for the nMOS and pMOS. Besides this the ~6.1Aå InAs-GaSb-AlSb lattice system offsets rich possibilities for band engineering as shown in Figure. 1, which can be applied to other applications such as tunnel FETs as well.
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