Abstract
Al Ga N ∕ Ga N heterostructure field-effect transistor design using capacitively coupled contacts (C3HFET) is presented. Insulated-gate [C3 metal-oxide-semiconductor HFET (C3MOSHFET)] has also been realized. The capacitively coupled source, gate, and drain of C3 device do not require annealed Ohmic contacts and can be fabricated using gate alignment-free technology. For typical AlGaN∕GaN heterostructures, the equivalent contact resistance of C3 transistors is below 0.6Ωmm. In rf-control applications, the C3HFET and especially the C3MOSHFET have much higher operating rf powers as compared to HFETs. C3 design is instrumental for studying the two-dimensional electron gas transport in other wide band gap heterostructures such as AlN∕GaN, diamond, etc., where Ohmic contact fabrication is difficult.
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