Abstract
8 eV for the GaN/AlNsystem) and subpicosecond intersubband scattering rates, III-nitride het-erostructures in the form of quantum wells or quantum dots are excellentcandidates for high-speed unipolar devices operating at optical-flber telecom-munication wavelengths, and relying on the quantum conflnement of elec-trons. In this work, we present the plasma-assisted molecular-beam epitaxialgrowth of quantum well infrared photodetector structures. The growth ofSi-doped GaN/AlN multiple quantum well structures is optimized by control-ling substrate temperature, metal excess and growth interruptions. Struc-tural characterization conflrms a reduction of the interface roughness to themonolayer scale.
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