Abstract
Incorporation into the multi-layered active region of a semiconductor light-emitting structure specially designed intermediate carrier blocking layers (IBLs) allows efficient control over the carrier injection distribution across the structure’s active region to match the application-driven device injection characteristics. This approach has been successfully applied to control the color characteristics of monolithic multi-color light-emitting diodes (LEDs). We further exemplify the method’s versatility by demonstrating the IBL design of III-nitride multiple-quantum-well (MQW) light-emitting diode with active quantum wells uniformly populated at LED operational current.
Highlights
Inhomogeneous carrier injection and an uneven population of optically active quantum wells unfavorably affects the performance of multiple-quantum-well (MQW) light emitters [1]
Low-energy drift-diffusion mobile carriers were assumed to be the only source of capture layout would essentially depend on the required light-emitting diodes (LEDs) operational conditions like nominal bias voltage or injection current. This approach has been successfully applied to achieve the first full-color tunable monolithic LED covering complete RGB gamut [11,12], and recently, has been used to implement a white-color LED with tunable color temperature [13]. We demonstrate yet another example of the intermediate carrier blocking layers (IBLs) design of III-nitride MQW LED active region featuring a uniform population of active quantum wells at LED operational voltage
QWs separated by nm wide regions designed with or without three identical 4 nm-wide GaInN QWs separated by 20 nm wide regions designed with or without the IBLs
Summary
Inhomogeneous carrier injection and an uneven population of optically active quantum wells unfavorably affects the performance of multiple-quantum-well (MQW) light emitters [1]. In III-nitride based LED structures, inferior hole transport is the commonly accepted source of inhomogeneous injection [2]. The excessive depth of InGaN quantum wells employed in visible-range light emitters and related increases in quantum well (QW) population capacity, are important causes of injection non-uniformity [3]. In deep-QW III-nitride heterostructures, the exchange between mobile and confined carriers is strongly biased toward the capture process. The latter is adversely affected by ballistic overshoot phenomena and becomes increasingly inefficient for narrow InGaN quantum well layers. The final established balance between the slow carrier capture and fast intra-QW recombination keeps the dynamic quantum well populations in profoundly away from equilibrium, and in case of different rates of electron and hole capture, increases the net confined
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