Abstract
Circuits are proposed which, by limiting the fault current magnitude, extends the short-circuit withstand time of high-efficiency (high-gain) IGBTs (insulated-gate bipolar transistors). Limiting of the fault current magnitude also results in reduced turn-off voltage transients, a desirable byproduct, especially for higher current modules. Moreover, the adverse Miller effect is counterbalanced to a great degree. If the fault current is of the short transient type, the circuit restores normal operation, a desirable feature for noise-prone systems. The circuit does not require an external DC supply to operate. This feature combined with the simplicity of the circuit, renders it feasible for insertion in IGBT modules or connection as an interface between the gate driver and module. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
