Abstract
Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT) is widely used in high power applications. However, its switching frequency is generally low because of relatively large switching losses. Silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) is much more superior due to their fast switching speed, which is determined by the internal parasitic capacitance instead of the stored charges, like the IGBT. By the combination of SiC MOSFET and Si IGBT, this paper presents a novel series hybrid switching method to achieve IGBT’s dynamic switching loss reduction by switching under Zero Voltage Hard Current (ZVHC) turn-on and Zero Current Hard Voltage (ZCHV) turn-off conditions. Both simulation and experimental results of IGBT are carried out, which shows that the soft switching of IGBT has been achieved both in turn-on and turn-off period. Thus 90% turn-on loss and 57% turn-off loss are reduced. Two different IGBTs’ test results are also provided to study the modulation parameter’s effect on the turn-off switching loss. Furthermore, with the consideration of voltage and current transient states, a new soft switching classification is proposed. At last, another improved modulation and Highly Efficient and Reliable Inverter Concept (HERIC) inverter are given to validate the effectiveness of the device level hybrid soft switching method application.
Highlights
The Silicon Insulated Gate Bipolar Transistor (Si IGBT) is one of the most important power semiconductor devices and is found in widespread high power applications, like medium voltage motor drives, EV traction inverters, and grid-connected inverters for PV and wind
This paper presents a novel series hybrid switching method to achieve IGBT’s dynamic
This paper presents a novel series hybrid switching method to achieve IGBT’s dynamic switching switching loss reduction by switching under Zero Voltage Hard Current (ZVHC) turn-on and Zero loss reduction by switching under Zero Voltage Hard Current (ZVHC) turn-on and Zero Current
Summary
The Si IGBT is one of the most important power semiconductor devices and is found in widespread high power applications, like medium voltage motor drives, EV traction inverters, and grid-connected inverters for PV and wind. Based on the parallel connection of these two devices, the hybrid switch achieved better performance for the higher frequency It can improve the efficiency when introducing to different applications [17,18]. Devices, such as silicon carbide (SiC) MOSFET, provide an attractive solution to improve power converter efficiency and power density by reducing semiconductor losses, operating at higher switching frequencies, and higher temperatures in many different applications. Two different IGBTs’ test results are provided to study the modulation parameter’s effect on the turn-off switching loss Another improved modulation is given in this paper to help IGBT to achieve ZCZV turn-off soft switching.
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