IGBT and Diode Loss Estimation Under Hysteresis Switching

Abstract

This paper presents a power loss estimation method for insulated-gate bipolar transistors (IGBTs) and diodes that operate under hysteresis switching. The method relies on datasheet information and three measurements in a phase leg: phase current, one IGBT switching gate signal, and the dc bus voltage across the phase leg. No parasitic models, thermal analysis, or slow simulations are required, and measurements can be provided from simulations or experiments. The method is validated for periodic pulsewidth modulation, then for aperiodic hysteresis switching. Results show that the proposed method is accurate while maintaining simplicity. It is promising for implementation in combined thermoelectric simulations and design optimization.