IGBT and Diode Behavior During Short-Circuit Type 3

Abstract

A short circuit during inverter operation can result in the so-called short-circuit types 2 and 3. The short-circuit type 3 results in an interaction with several current commutations between the Insulate-Gate Bipolar Transistor (IGBT) and the antiparallel diode. The switched ON IGBT, conducting no current before the short circuit occurs, has no plasma inside and can block any voltage. It behaves like a voltage-controlled current source, which can stress the diode by commutating the complete short-circuit current into the diode. An avalanche arises inside the diode, which can lead to a destruction of the diode. The current through the diode determines dv/dt and makes the diode a dominating semiconductor during the short circuit. The current source behavior of the IGBT can be verified with semiconductor simulations and measurements on a high-power 3.3-kV IGBT. In the simulations, the IGBT is replaced by a current source, which gives similar results. For the measurements, the gate–emitter voltage is varied to change the IGBT current without influencing the collector–emitter voltage.