Abstract
The micro-defects in semi-insulating gallium arsenide (SI-GaAs) were investigated by means of chemical etching (ultrasonic aided Abtahams-Buiocchi etching, melting KOH etching), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The experimental results showed that the micro-defects in SI-GaAs are micro-precipitates of As with the size of microns. Micro-defects and dislocations have strong interaction, dislocations absorb the micro-defects and micro-defects decorate on the dislocations.
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