Abstract
An epitaxied AlGaAs/GaAs/AlGaAs heterostructure is studied by using the low frequency noise technique over a wide range of temperature from 300 K down to 4 K as a function of bias. Emphasis is placed on the generation—recombination noise because it is present on a wide range of temperature and frequency. Thermal activation energies and capture cross sections of traps responsible for this kind of noise are extracted from an arrhenius plot. Six kinds of traps have been identified and their electrical nature has been suggested.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
