Abstract
An epitaxied AlGaAs/GaAs/AlGaAs heterostructure is studied by using the low frequency noise technique over a wide range of temperature from 300 K down to 4 K as a function of bias. Emphasis is placed on the generation—recombination noise because it is present on a wide range of temperature and frequency. Thermal activation energies and capture cross sections of traps responsible for this kind of noise are extracted from an arrhenius plot. Six kinds of traps have been identified and their electrical nature has been suggested.
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