Abstract
Using high-resolution Laplace deep level transient spectroscopy studies, several TiH-related complexes (E40′, E170, E170′, and E260) were observed in wet-chemically etched and H-plasma treated n-type Si. We assign E40′ and E170 to two different configurations of Ti with one H atom. Both of them are shown to behave as single donor states with an activation enthalpy of EC − 0.07 eV (E40′) and EC − 0.34 eV (E170) in the upper half of Si. E170′ with an activation energy of EC − 0.37 eV is correlated with the donor state of the TiiH2 defect, whereas E260 is attributed to the donor state of TiiH3. Besides the TiH defects, the presence of electrically inactive TiH4 is reported. No titanium-hydrogen-related levels were observed in p-type Si.
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