Abstract
AbstractShockley‐type in‐grown stacking faults (IGSFs) in 4H‐SiC epilayers are studied. Most of the IGSFs are observed to be of triangular shape in the samples. Detailed optical features of two types of IGSFs are revealed by room temperature cathodoluminescence (RTCL) and low‐temperature photoluminescence (LTPL). Energy gaps (Egx) of the two types of IGSFs are deduced to be 2.511 and 2.764 eV from their emission wavelengths. They are identified to be of (6, 2) and (4, 4) types, respectively. The nucleation sites and propagation of the IGSFs are tracked by back etching and defect‐selective‐etching (DSE), and threading screw dislocations (TSDs) are frequently observed at the nucleation sites of the Shockley‐type IGSFs. The nucleation mechanism of these IGSFs is discussed, and the TSDs are suggested to be the major sources of the IGSFs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
