Abstract

We investigate the molecular species present in hydrazine CuIn(Se,S)2 precursor solutions, their interactions, and phase formation in solution processed CuIn(Se,S)2 thin films through Raman spectroscopy. The reaction between Cu2S and sulfur yields [Cu6S4]2− ions, while [In2Se4]2− ions are formed by the reaction of In2Se3 with selenium within their respective solutions. Once combined to prepare a CuIn(Se,S)2 precursor solution, these two species appear to be bridged via newly formed In−S bonds. The creation of the In−S bonds in the CuIn(Se,S)2 precursor solution provides strong evidence for the mixing of copper, indium, sulfur, and selenium at a molecular level even prior to deposition. From this configuration, relatively little atomic diffusion is required to reach the chalcopyrite structure, which enables the formation of highly uniform polycrystalline CuIn(Se,S)2 films at relatively low temperatures.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.