Abstract
Our arsneic cluster model for the midgap levels (EL2 family) is discussed in more details to account for the data of ESR and related measurements. It is shown that defect states in three fold coordinated amorphous arsenic clusters, namely four fold coordinated arsenic atoms, might give rise to an ESR spectrum which was previously attributed to an arsenic antisite. Moreover, the cluster model is more preferable in explaining complex ESR data which were recently observed. Defect reactions in arsenic clusters may predict peculiar optical properties of the EL2 family which have similarities to those in bulk amorphous arsenic. Motions of dislocations, annealing effects and laser degradation can also be explained by the behavior of excess arsenics (arsenic clusters) in GaAs.
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