Abstract
We have studied the near surface defects of the delta-doped B:Si(111)-(√3 × √3)R30° system using a combination of scanning tunneling microscopy, non-contact atomic force microscopy, Kelvin probe force spectroscopy, total energy DFT, and STM theoretical simulations. We positively identify and characterize two near surface defects: the adatom vacancy and a B substitutional defect located in the second Si bilayer. We also confirm the assignment of the dangling-bond defect. Additionally, the influence that the subsurface B dopants have on the surface electronic structure, the modulation of the surface potential and the chemical activity of the surface is investigated.
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