Abstract
Optical second-harmonic and sum-frequency spectra of clean and oxidized Si(100) and Si(111) samples reveal a strong resonance band at 3.3 eV photon energy. It is concluded that the resonance arises from direct transitions between valence and conduction band states in a few monolayers of strained silicon at the Si-${\mathrm{SiO}}_{2}$ interface and at the selvedge of clean reconstructed silicon surfaces.
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