Abstract
The photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor heterostructures with donor-acceptor-doped AlGaAs barriers is studied. It is found that the introduction of additional p +-doped AlGaAs layers into the design brings about the appearance of new bands in the photoluminescence spectra. These bands are identified as resulting from transitions (i) in donor-acceptor pairs in doped AlGaAs layers and (ii) between the conduction subband and acceptor levels in the undoped InGaAs quantum well.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
