Abstract
The impact of EUV mask surface conditions on the patterned mask inspection process was investigated. The results of simulations show that the defect detection capability is degraded by the formation of a native oxide film on the surface of a Ru capped multilayer. This effect was assessed by constructing the secondary electron yield (SEY) curves of the EUV mask materials. These experimentally-obtained SEY curves were examined using semi-empirical Monte Carlo simulations. The simulation results demonstrated that a native oxide film increased the SEY, and that this effect varied with film thickness. The results suggest that defect detection capability will vary according to the thickness of the native oxide when employing an inspection system using an electron beam technique. Also of interest is the finding that the thickness of the native oxide film can be ascertained by fitting the SEY curves.
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