Abstract
The measurement of the energy distribution of vacuum emitted electrons from InGaN/GaN light-emitting diodes (LEDs) has proven essential in understanding the efficiency loss mechanism known as droop. We report on the measurement and identification of a new low-energy feature in addition to the previously measured three peaks present in the electron emission spectrum from a forward biased LED. Photoemission measurements show that the two low-energy peaks correspond to photoemitted electrons from each of the p-contact metals, palladium and gold. We confirm that the mid and high-energy peaks are due to electrons which have transited the p-type region of the device and have been emitted from the semiconductor surface from the bulk Γ-valley or a high-energy side valley.
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