Abstract
The I1deep line and its LO phonon replicas have been studied for the first time in the photoluminescence of ZnSxSe1-x (0.02<or=x<or=0.125) single crystals at 2 K using excitation spectroscopy, selectively excited photoluminescence and by doping and annealing with controlled partial pressures. The Huang-Rhys parameter S, defined by the intensity ratio of the one LO phonon and no-phonon luminescence lines, increases non-linearly as the composition parameter x increases.
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