Abstract
A strong gettering effect appears after high-energy Si self-implantation and subsequent annealing in two zones at the projected range of the silicon ions ( R p) and in a region at about R p/2. The defects responsible for the impurity gettering at R p/2 were studied by means of positron annihilation. It was found that diffusing Cu impurities were captured by small vacancy agglomerates. Monoenergetic positron beams with improved depth resolution were used to characterize the defects. Excellent depth resolution was obtained when samples were wedge-shaped polished and studied using the Munich Scanning Positron Microscope.
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