Identification of fragment ions produced from hexamethyldigermane and the production of low-energy beam of fragment ion possessing Ge-C bond

Satoru Yoshimura,Satoshi Sugimoto,Masato Kiuchi,Takae Takeuchi

doi:10.1063/1.5084181

Abstract

Fragment ions produced from hexamethyldigermane (HMDG) were identified using an ion beam system. The possible chemical formulae for these ions are CH3+, C2H4+, Ge+, GeCHx+, and GeC3Hx+. Among the fragment ions, GeCHx+ ions were mass-selected and irradiated to a Si substrate at room temperature. The ion energy was set at approximately 10 eV. The analyses of the film deposited on the substrate suggested that GeCHx+ ion beam produced from HMDG was useful for germanium-carbon film formation.

Highlights

Low-energy ion beam deposition has been recognized as a powerful technique.1,2 In film formation experiments using the low-energy ion beam technique, ions are produced by the decomposition of source materials
In order to clarify the constituent atoms of the ion beam, the mass-selected ions were irradiated to a Si substrate, and the resulting film deposited on the substrate was examined by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), and atomic force microscopy (AFM)
Fragment ions produced from HMDG can be detected by a Faraday cup set behind the mass selector [Fig 1(a)]

Summary

INTRODUCTION

Low-energy ion beam deposition has been recognized as a powerful technique. In film formation experiments using the low-energy ion beam technique, ions are produced by the decomposition of source materials. In film formation experiments using the low-energy ion beam technique, ions are produced by the decomposition of source materials. The formation of GeC films is not necessarily easy because of the low solubility of carbon atoms in bulk germanium.. Few experiments have been done to form GeC films using the low-energy ion beam deposition technique. HMDG is considered to be an appropriate source material for GeC film formation. No experiments have been attempted to produce low-energy massselected fragment ion beams through the decomposition of HMDG. We have been attempting to identify fragment ions produced through the decomposition of various source materials such as methylsilane, dimethylsilane, hexamethyldisilane, hexamethyldisiloxane, tetraethylorthosilicate, and hexamethyldisilazane.. Fragment ions produced from HMDG were identified as a first step for the GeC film formation experiments using the low-energy ion beam technique. In order to clarify the constituent atoms of the ion beam, the mass-selected ions were irradiated to a Si substrate, and the resulting film deposited on the substrate was examined by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), and atomic force microscopy (AFM)

EXPERIMENTAL SETUP

EXPERIMENTAL RESULTS AND DISCUSSION

CONCLUSION