Abstract
The characterization of ferroelectricity in ultra-thin ferroelectric (FE) films is highly challenging due to enlarged leakage current and resistive switching (RS) effect. In this study, we investigated the polarization switching properties of 1.5-nm thick Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) films via direct hysteresis remnant polarization/voltage (P-V) loop measurement. To reduce the leakage current and eliminate the RS effect, positive-up-negative-down (PUND) measurement was implemented on back-to-back connected complementary cells. Rational hysteresis loops, with remnant polarization of approximately 2 μC/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , were successfully obtained by directly measuring the polarization switching currents. In this study, we provide direct evidence of the stable ferroelectric property in 1.5-nm thick HZO films, and thereby show a potential prospect of ultimate scalability of HZO films.
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