Abstract
The P6/P7 centers in 4H-SiC were studied by electron paramagnetic resonance (EPR) and ab initio supercell calculations. The hyperfine coupling constants of C and Si neighbors obtained by EPR are in good agreement with the calculated values for the neutral divacancy, V C V Si 0 . Our results suggest that the P6/P7 centers, which were previously assigned to the photo-excited triplet states of the carbon vacancy–carbon antisite pairs in the double positive charge state ( V C C Si 2 + ) , are related to the triplet ground states of the C 3 v / C 1 h configurations of V C V Si 0 .
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