Identification of defect sites on oxide surfaces by metastable impact electron spectroscopy

Abstract

In this review, thin films of SiO2 on Mo(1 1 2) and MgO(1 0 0) on Mo(1 0 0) have been characterized using metastable impact electron and ultraviolet photoelectron spectroscopies (metastable impact electron spectroscopy (MIES) and ultraviolet photoelectron spectroscopy). The electronic and chemical properties of the thin films are identical to those of the corresponding bulk oxides. For different prepared defective SiO2 surfaces, additional features are observed in the band-gap region. These features arise from vacancies or excess oxygen and are consistent with theoretical predictions of additional occupied states in the band-gap due to point defects. Extended defect sites on SiO2 and MgO are identified using MIES by a narrowing of the O(2p) features with a reduction in the density of extended defect sites. MIES of adsorbed Xe (MAX) is also used to estimate the density of extended defect sites. Furthermore, it is shown that CO is an appropriate probe molecule for estimating the defect density of MgO surfaces. Upon Ag exposure, the change in the work function of a low defect MgO(1 0 0) versus a high defect surface is markedly different. For a sputter-damaged MgO(1 0 0) surface, an initial decrease of the work function was found, implying that small Ag clusters on this surface are electron deficient. In contrast, for SiO2 no significant change of the work function upon Ag exposure with increasing defect density was observed. On MgO(1 0 0), the presence of defect sites markedly alter the electronic and chemical properties of supported Ag clusters. Such a strong influence of defect sites was not found for Ag clusters on SiO2.