Abstract
The composition, morphology, and structure of a gallium-containing carbon deposit that forms under certain conditions during hydride-organometallic vapor phase epitaxy (HOMVPE) of GaN were characterized by several techniques. The deposits are produced during pyrolysis of trimethyl gallium and results in gas-phase depletion of Ga, which reduces the growth rate and reproducibility of GaN growth. The morphology of the deposit depended on temperature, changing from granular to tubular-shape, and then to powder-like features with increasing temperature. The deposits were composed of metallic gallium cores surrounded by graphite skin layers. Interestingly, in the temperature range 560 to 660°C the structure consisted of graphitic carbon-walled tubes filled to varying extents with Ga. The addition of to the carrier gas stream was found to be an effective method for reducing or eliminating the formation of the deposit.
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